TC6320K6-G Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N/P-CH 200V 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 125pF @ 25V
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-DFN (4x4)
Part Status: Active
auf Bestellung 3300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3300+ | 2.21 EUR |
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Produktbewertung abgeben
Technische Details TC6320K6-G Microchip Technology
Description: MOSFET N/P-CH 200V 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 125pF @ 25V, Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V, Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: 8-DFN (4x4), Part Status: Active.
Weitere Produktangebote TC6320K6-G nach Preis ab 1.85 EUR bis 2.90 EUR
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TC6320K6-G | Hersteller : Microchip Technology |
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TC6320K6-G | Hersteller : Microchip Technology |
TC6320K6-G Microchip Technology Transistors MOSFETs N/P-CH Si 200V 8-Pin SOIC T/R Si - Arrow.com |
auf Bestellung 9810 Stücke: Lieferzeit 14-21 Tag (e) |
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TC6320K6-G | Hersteller : Microchip Technology |
TC6320K6-G Microchip Technology Transistors MOSFETs N/P-CH Si 200V 8-Pin SOIC T/R Si - Arrow.com |
auf Bestellung 9810 Stücke: Lieferzeit 14-21 Tag (e) |
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TC6320K6-G | Hersteller : Microchip Technology |
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auf Bestellung 14016 Stücke: Lieferzeit 10-14 Tag (e) |
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TC6320K6-G | Hersteller : Microchip Technology |
Description: MOSFET N/P-CH 200V 8DFN Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 125pF @ 25V Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: 8-DFN (4x4) Part Status: Active |
auf Bestellung 4437 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
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TC6320K6-G Produktcode: 143550
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