TC6320K6-G Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET N/P-CH 200V 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 125pF @ 25V
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-DFN (4x4)
Part Status: Active
Description: MOSFET N/P-CH 200V 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 125pF @ 25V
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-DFN (4x4)
Part Status: Active
auf Bestellung 3300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3300+ | 2.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TC6320K6-G Microchip Technology
Description: MOSFET N/P-CH 200V 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 125pF @ 25V, Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V, Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: 8-DFN (4x4), Part Status: Active.
Weitere Produktangebote TC6320K6-G nach Preis ab 2.15 EUR bis 2.83 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TC6320K6-G | Hersteller : Microchip Technology |
Description: MOSFET N/P-CH 200V 8DFN Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 125pF @ 25V Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: 8-DFN (4x4) Part Status: Active |
auf Bestellung 5248 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||
TC6320K6-G | Hersteller : Microchip Technology | MOSFET N AND P-CH 200V MOSFET |
auf Bestellung 14530 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||
TC6320K6-G |
auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
TC6320K6-G Produktcode: 143550 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
|||||||||||
TC6320K6-G | Hersteller : Microchip Technology | TC6320K6-G Microchip Technology Transistors MOSFETs N/P-CH Si 200V 8-Pin SOIC T/R Si - Arrow.com |
Produkt ist nicht verfügbar |
||||||||||
TC6320K6-G | Hersteller : Microchip Technology | TC6320K6-G Microchip Technology Transistors MOSFETs N/P-CH Si 200V 8-Pin SOIC T/R Si - Arrow.com |
Produkt ist nicht verfügbar |
||||||||||
TC6320K6-G | Hersteller : MICROCHIP TECHNOLOGY | TC6320K6-G Multi channel transistors |
Produkt ist nicht verfügbar |
||||||||||
TC6320K6-G | Hersteller : Microchip Technology | Trans MOSFET N/P-CH Si 200V 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
||||||||||
TC6320K6-G | Hersteller : Microchip Technology | Trans MOSFET N/P-CH Si 200V 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |