TC8020K6-G Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET 6N/6P-CH 200V 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 6 N and 6 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 56-QFN (8x8)
Description: MOSFET 6N/6P-CH 200V 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 6 N and 6 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 56-QFN (8x8)
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 17.85 EUR |
25+ | 14.85 EUR |
100+ | 13.54 EUR |
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Technische Details TC8020K6-G Microchip Technology
Description: MOSFET 6N/6P-CH 200V 56VQFN, Packaging: Tray, Package / Case: 56-VFQFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 6 N and 6 P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V, Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: 56-QFN (8x8).
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