TC8220K6-G Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET 2N/2P-CH 200V 12DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V, 75pF @ 25V
Rds On (Max) @ Id, Vgs: 6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 12-DFN (4x4)
Part Status: Active
auf Bestellung 3300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3300+ | 2.95 EUR |
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Technische Details TC8220K6-G Microchip Technology
Description: MOSFET 2N/2P-CH 200V 12DFN, Packaging: Tape & Reel (TR), Package / Case: 12-VFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N and 2 P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V, 75pF @ 25V, Rds On (Max) @ Id, Vgs: 6Ohm @ 1A, 10V, Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: 12-DFN (4x4), Part Status: Active.
Weitere Produktangebote TC8220K6-G nach Preis ab 3.23 EUR bis 4.31 EUR
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TC8220K6-G | Hersteller : Microchip Technology |
Description: MOSFET 2N/2P-CH 200V 12DFN Packaging: Cut Tape (CT) Package / Case: 12-VFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V, 75pF @ 25V Rds On (Max) @ Id, Vgs: 6Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: 12-DFN (4x4) Part Status: Active |
auf Bestellung 3951 Stücke: Lieferzeit 10-14 Tag (e) |
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TC8220K6-G | Hersteller : Microchip Technology |
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auf Bestellung 2194 Stücke: Lieferzeit 10-14 Tag (e) |
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TC8220K6-G Produktcode: 144829
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| TC8220K6-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET x2; unipolar; 200/-200V; 2.3/-2.3A; VDFN12 Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 200/-200V Drain current: 2.3/-2.3A Case: VDFN12 On-state resistance: 5.3/6.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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