Technische Details TDB6HK180N16RRB48BPSA2 Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Operating Temperature: 175°C (TJ), Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode, Current - Hold (Ih) (Max): 220 mA, Current - Gate Trigger (Igt) (Max): 100 mA, Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz, Number of SCRs, Diodes: 3 SCRs, 3 Diodes, Voltage - Gate Trigger (Vgt) (Max): 2 V, Part Status: Active, Voltage - Off State: 1.6 kV.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| TDB6HK180N16RRB48BPSA2 | Hersteller : Infineon Technologies |
 2.5kVAC1minInsulation IGBT-Module |
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| TDB6HK180N16RRB48BPSA2 | Hersteller : Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2B-411 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 175°C (TJ) Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode Current - Hold (Ih) (Max): 220 mA Current - Gate Trigger (Igt) (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz Number of SCRs, Diodes: 3 SCRs, 3 Diodes Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Voltage - Off State: 1.6 kV |
Produkt ist nicht verfügbar |
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| TDB6HK180N16RRB48BPSA2 | Hersteller : Infineon Technologies | Discrete Semiconductor Modules N |
Produkt ist nicht verfügbar |