auf Bestellung 8450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 0.2 EUR |
| 22+ | 0.13 EUR |
| 100+ | 0.058 EUR |
| 1000+ | 0.053 EUR |
| 3000+ | 0.049 EUR |
| 9000+ | 0.026 EUR |
| 45000+ | 0.025 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TDTA114E,LM Toshiba
Description: TRANS PREBIAS PNP 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Supplier Device Package: SOT-23-3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 320 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 10 kOhms, Resistors Included: R1 Only.
Weitere Produktangebote TDTA114E,LM nach Preis ab 0.058 EUR bis 0.25 EUR
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TDTA114E,LM | Hersteller : Toshiba Semiconductor and Storage |
 Description: TRANS PREBIAS PNP 50V SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 320 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistors Included: R1 Only |
auf Bestellung 2785 Stücke: Lieferzeit 10-14 Tag (e) |
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TDTA114E,LM | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 320 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistors Included: R1 Only |
Produkt ist nicht verfügbar |