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TDTA143E,LM Toshiba Semiconductor and Storage

TDTA143E_datasheet_en_20201113.pdf?did=36366&prodName=TDTA143E Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.05 EUR
Mindestbestellmenge: 3000
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Technische Details TDTA143E,LM Toshiba Semiconductor and Storage

Description: TRANS PREBIAS PNP 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Supplier Device Package: SOT-23-3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 320 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 4.7 kOhms.

Weitere Produktangebote TDTA143E,LM nach Preis ab 0.061 EUR bis 0.28 EUR

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Preis ohne MwSt
TDTA143E,LM Hersteller : Toshiba Semiconductor and Storage TDTA143E_datasheet_en_20201113.pdf?did=36366&prodName=TDTA143E Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
86+ 0.21 EUR
159+ 0.11 EUR
500+ 0.087 EUR
1000+ 0.061 EUR
Mindestbestellmenge: 63
TDTA143E,LM TDTA143E,LM Hersteller : Toshiba TDTA143E_datasheet_en_20201113.pdf?did=36366&prodName=TDTA143E Bipolar Transistors - Pre-Biased BRT -0.1A -50V 4.7KOhm / 4.7KOhm
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