TESD5V0L1UC RJG Taiwan Semiconductor
auf Bestellung 4820 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.52 EUR |
| 10+ | 0.36 EUR |
| 100+ | 0.15 EUR |
| 1000+ | 0.12 EUR |
| 2500+ | 0.097 EUR |
| 10000+ | 0.088 EUR |
| 25000+ | 0.083 EUR |
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Technische Details TESD5V0L1UC RJG Taiwan Semiconductor
Description: TVS DIODE 5VWM 15VC DFN1006L, Packaging: Tape & Reel (TR), Package / Case: SOD-882, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 155°C (TJ), Applications: General Purpose, Capacitance @ Frequency: 2pF @ 1MHz, Current - Peak Pulse (10/1000µs): 3A (8/20µs), Voltage - Reverse Standoff (Typ): 5V (Max), Supplier Device Package: DFN1006L, Bidirectional Channels: 1, Voltage - Breakdown (Min): 6V, Voltage - Clamping (Max) @ Ipp: 15V, Power - Peak Pulse: 100W, Power Line Protection: No, Part Status: Active.
Weitere Produktangebote TESD5V0L1UC RJG nach Preis ab 0.089 EUR bis 0.53 EUR
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TESD5V0L1UC RJG | Hersteller : Taiwan Semiconductor Corporation |
 Description: TVS DIODE 5VWM 15VC DFN1006LPackaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 155°C (TJ) Applications: General Purpose Capacitance @ Frequency: 2pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: DFN1006L Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 100W Power Line Protection: No Part Status: Active |
auf Bestellung 14982 Stücke: Lieferzeit 10-14 Tag (e) |
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TESD5V0L1UC RJG | Hersteller : Taiwan Semiconductor |
ESD Suppressor TVS Bi-Dir 5V 2-Pin DFN T/R |
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TESD5V0L1UC RJG | Hersteller : Taiwan Semiconductor |
ESD Suppressor Diode TVS Bi-Dir 5V 15Vc 2-Pin DFN T/R |
Produkt ist nicht verfügbar |
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TESD5V0L1UC RJG | Hersteller : Taiwan Semiconductor Corporation |
Description: TVS DIODE 5VWM 15VC DFN1006L Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 155°C (TJ) Applications: General Purpose Capacitance @ Frequency: 2pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: DFN1006L Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 100W Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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| TESD5V0L1UC RJG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 100W; 6÷9.8V; 3A; bidirectional; DFN1006-2; reel,tape Type of diode: TVS Breakdown voltage: 6...9.8V Max. forward impulse current: 3A Peak pulse power dissipation: 0.1kW Mounting: SMD Case: DFN1006-2 Max. off-state voltage: 5V Kind of package: reel; tape Leakage current: 0.1µA Semiconductor structure: bidirectional |
Produkt ist nicht verfügbar |