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TJ10S04M3L(T6L1,NQ

TJ10S04M3L(T6L1,NQ Toshiba Semiconductor and Storage

docget.jsp?did=11298&prodName=TJ10S04M3L Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
auf Bestellung 1995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.13 EUR
11+ 1.75 EUR
100+ 1.36 EUR
500+ 1.15 EUR
1000+ 0.94 EUR
Mindestbestellmenge: 9
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Technische Details TJ10S04M3L(T6L1,NQ Toshiba Semiconductor and Storage

Description: MOSFET P-CH 40V 10A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V, Power Dissipation (Max): 27W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V.

Weitere Produktangebote TJ10S04M3L(T6L1,NQ nach Preis ab 1.22 EUR bis 3.07 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TJ10S04M3L(T6L1,NQ TJ10S04M3L(T6L1,NQ Hersteller : Toshiba TJ10S04M3L_datasheet_en_20200624-1858424.pdf MOSFET P-Ch MOS 33.8 mOhm 10V 10uA 2.0 to 3.0V
auf Bestellung 1936 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
17+3.07 EUR
21+ 2.51 EUR
100+ 1.97 EUR
500+ 1.67 EUR
1000+ 1.36 EUR
2000+ 1.28 EUR
4000+ 1.22 EUR
Mindestbestellmenge: 17
TJ10S04M3L(T6L1,NQ TJ10S04M3L(T6L1,NQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=11298&prodName=TJ10S04M3L Description: MOSFET P-CH 40V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
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