Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TJ50S06M3L,LXHQ
TJ50S06M3L,LXHQ

TJ50S06M3L,LXHQ Toshiba Semiconductor and Storage

TJ50S06M3L_datasheet_en_20200624.pdf?did=22572&prodName=TJ50S06M3L Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V
auf Bestellung 3213 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.29 EUR
10+ 1.87 EUR
100+ 1.45 EUR
500+ 1.23 EUR
1000+ 1 EUR
Mindestbestellmenge: 8
Produktrezensionen
Produktbewertung abgeben

Technische Details TJ50S06M3L,LXHQ Toshiba Semiconductor and Storage

Description: MOSFET P-CH 60V 50A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), Rds On (Max) @ Id, Vgs: 13.8mOhm @ 25A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V.

Weitere Produktangebote TJ50S06M3L,LXHQ nach Preis ab 0.97 EUR bis 2.31 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TJ50S06M3L,LXHQ TJ50S06M3L,LXHQ Hersteller : Toshiba TJ50S06M3L_datasheet_en_20200624-1858419.pdf MOSFET 90W 1MHz Automotive; AEC-Q101
auf Bestellung 8498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.31 EUR
10+ 1.9 EUR
100+ 1.47 EUR
500+ 1.27 EUR
1000+ 1.03 EUR
2000+ 0.97 EUR
Mindestbestellmenge: 2
TJ50S06M3L,LXHQ TJ50S06M3L,LXHQ Hersteller : Toshiba Semiconductor and Storage TJ50S06M3L_datasheet_en_20200624.pdf?did=22572&prodName=TJ50S06M3L Description: MOSFET P-CH 60V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V
auf Bestellung 1995 Stücke:
Lieferzeit 10-14 Tag (e)
TJ50S06M3L,LXHQ TJ50S06M3L,LXHQ Hersteller : Toshiba tj50s06m3l_datasheet_en_20200624.pdf Trans MOSFET P-CH Si 60V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R
Produkt ist nicht verfügbar