Technische Details TJ80S04M3L(T6L1,NQ Toshiba
Description: MOSFET P-CH 40V 80A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7770 pF @ 10 V.
Weitere Produktangebote TJ80S04M3L(T6L1,NQ nach Preis ab 1 EUR bis 2.26 EUR
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TJ80S04M3L(T6L1,NQ | Toshiba |
 Trans MOSFET P-CH Si 40V 80A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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TJ80S04M3L(T6L1,NQ | Toshiba |
Trans MOSFET P-CH Si 40V 80A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R |
auf Bestellung 7256 Stücke: Lieferzeit 14-21 Tag (e) |
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TJ80S04M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 80A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7770 pF @ 10 V |
auf Bestellung 1228 Stücke: Lieferzeit 10-14 Tag (e) |
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| TJ80S04M3L(T6L1,NQ |
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Hersteller: Toshiba
Trans MOSFET P-CH Si 40V 80A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R
Trans MOSFET P-CH Si 40V 80A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 1.06 EUR |
| TJ80S04M3L(T6L1,NQ |
|
Hersteller: Toshiba
Trans MOSFET P-CH Si 40V 80A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R
Trans MOSFET P-CH Si 40V 80A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R
auf Bestellung 7256 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 79+ | 2.24 EUR |
| 85+ | 2.05 EUR |
| 116+ | 1.46 EUR |
| 200+ | 1.36 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1.07 EUR |
| 2000+ | 1.02 EUR |
| 4000+ | 1 EUR |
| TJ80S04M3L(T6L1,NQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7770 pF @ 10 V
Description: MOSFET P-CH 40V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7770 pF @ 10 V
auf Bestellung 1228 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.26 EUR |
| 12+ | 1.86 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1 EUR |