
TJ80S04M3L(T6L1,NQ Toshiba
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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2000+ | 0.89 EUR |
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Technische Details TJ80S04M3L(T6L1,NQ Toshiba
Description: MOSFET P-CH 40V 80A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7770 pF @ 10 V.
Weitere Produktangebote TJ80S04M3L(T6L1,NQ nach Preis ab 0.74 EUR bis 1.90 EUR
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TJ80S04M3L(T6L1,NQ | Hersteller : Toshiba |
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auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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TJ80S04M3L(T6L1,NQ | Hersteller : Toshiba |
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auf Bestellung 7256 Stücke: Lieferzeit 14-21 Tag (e) |
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TJ80S04M3L(T6L1,NQ | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7770 pF @ 10 V |
auf Bestellung 1228 Stücke: Lieferzeit 10-14 Tag (e) |
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TJ80S04M3L(T6L1,NQ | Hersteller : Toshiba |
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auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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TJ80S04M3L(T6L1,NQ | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |
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TJ80S04M3L(T6L1,NQ | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7770 pF @ 10 V |
Produkt ist nicht verfügbar |
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TJ80S04M3L(T6L1,NQ | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |