TJ9A10M3,S4Q Toshiba

Category: THT P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -9A; 19W; TO220FP, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -9A, Power dissipation: 19W, Case: TO220FP, Gate-source voltage: ±20V, On-state resistance: 0.12Ω, Mounting: THT, Gate charge: 47nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1000 Stücke.