TK055U60Z1,RQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: 600V DTMOS VI TOLL 55MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 300 V
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.52 EUR |
| 10+ | 8.41 EUR |
| 50+ | 6.66 EUR |
| 100+ | 6.09 EUR |
| 500+ | 5.74 EUR |
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Technische Details TK055U60Z1,RQ Toshiba Semiconductor and Storage
Description: 600V DTMOS VI TOLL 55MOHM, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 15A, 10V, Power Dissipation (Max): 270W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.69mA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 300 V.
Weitere Produktangebote TK055U60Z1,RQ nach Preis ab 6.68 EUR bis 12.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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TK055U60Z1,RQ | Toshiba |
MOSFETs 600V DTMOS VI TOLL 55mohm |
auf Bestellung 5960 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK055U60Z1,RQ |
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Hersteller: Toshiba
MOSFETs 600V DTMOS VI TOLL 55mohm
MOSFETs 600V DTMOS VI TOLL 55mohm
auf Bestellung 5960 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.73 EUR |
| 10+ | 8.52 EUR |
| 100+ | 6.85 EUR |
| 500+ | 6.68 EUR |