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Technische Details TK090U65Z,RQ Toshiba
Description: DTMOS VI TOLL PD=230W F=1MHZ, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: TOLL, Vgs(th) (Max) @ Id: 4V @ 1.27mA, Power Dissipation (Max): 230W (Tc).
Weitere Produktangebote TK090U65Z,RQ nach Preis ab 3.68 EUR bis 14.39 EUR
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TK090U65Z,RQ | Toshiba |
 Trans MOSFET N-CH Si 650V 30A 9-Pin(8+Tab) TOLL T/R |
auf Bestellung 1652 Stücke: Lieferzeit 14-21 Tag (e) |
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TK090U65Z,RQ | Toshiba Semiconductor and Storage |
Description: DTMOS VI TOLL PD=230W F=1MHZ Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TOLL Vgs(th) (Max) @ Id: 4V @ 1.27mA Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
auf Bestellung 2118 Stücke: Lieferzeit 10-14 Tag (e) |
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TK090U65Z,RQ | Toshiba |
MOSFETs POWER MOSFET TRANSISTOR TOLL PD=230W F=1MHZ |
auf Bestellung 1035 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK090U65Z,RQ |
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Hersteller: Toshiba
Trans MOSFET N-CH Si 650V 30A 9-Pin(8+Tab) TOLL T/R
Trans MOSFET N-CH Si 650V 30A 9-Pin(8+Tab) TOLL T/R
auf Bestellung 1652 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 3.68 EUR |
| TK090U65Z,RQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=230W F=1MHZ
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: DTMOS VI TOLL PD=230W F=1MHZ
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 2118 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.91 EUR |
| 10+ | 8 EUR |
| 100+ | 5.78 EUR |
| 500+ | 4.83 EUR |
| 1000+ | 4.82 EUR |
| TK090U65Z,RQ |
|
Hersteller: Toshiba
MOSFETs POWER MOSFET TRANSISTOR TOLL PD=230W F=1MHZ
MOSFETs POWER MOSFET TRANSISTOR TOLL PD=230W F=1MHZ
auf Bestellung 1035 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.39 EUR |
| 10+ | 6.33 EUR |