| Anzahl | Privatkunde |
|---|---|
| 48+ | 3.76 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
48 Stücke
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Technische Details TK090U65Z,RQ Toshiba
Description: DTMOS VI TOLL PD=230W F=1MHZ, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.27mA, Supplier Device Package: TOLL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V.
Weitere Produktangebote TK090U65Z,RQ nach Preis ab 3.76 EUR bis 12.78 EUR
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TK090U65Z,RQ | Toshiba |
 Trans MOSFET N-CH Si 650V 30A 9-Pin(8+Tab) TOLL T/R |
auf Bestellung 1652 Stücke: Lieferzeit 14-21 Tag (e) |
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TK090U65Z,RQ | Toshiba Semiconductor and Storage |
Description: DTMOS VI TOLL PD=230W F=1MHZ Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.27mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V |
auf Bestellung 2118 Stücke: Lieferzeit 10-14 Tag (e) |
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TK090U65Z,RQ | Toshiba |
MOSFETs POWER MOSFET TRANSISTOR TOLL PD=230W F=1MHZ |
auf Bestellung 1035 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TK090U65Z,RQ |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 650V 30A 9-Pin(8+Tab) TOLL T/R
Trans MOSFET N-CH Si 650V 30A 9-Pin(8+Tab) TOLL T/R
auf Bestellung 1652 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 3.76 EUR |
| TK090U65Z,RQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=230W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Description: DTMOS VI TOLL PD=230W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
auf Bestellung 2118 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.91 EUR |
| 10+ | 8 EUR |
| 100+ | 5.78 EUR |
| 500+ | 4.83 EUR |
| 1000+ | 4.82 EUR |
| TK090U65Z,RQ |
|
Hersteller: Toshiba
MOSFETs POWER MOSFET TRANSISTOR TOLL PD=230W F=1MHZ
MOSFETs POWER MOSFET TRANSISTOR TOLL PD=230W F=1MHZ
auf Bestellung 1035 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.78 EUR |
| 10+ | 6.31 EUR |
| 100+ | 5.09 EUR |