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TK090U65Z,RQ

TK090U65Z,RQ Toshiba

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Hersteller: Toshiba
MOSFETs POWER MOSFET TRANSISTOR TOLL PD=230W F=1MHZ
auf Bestellung 1058 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.84 EUR
2000+4.82 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TK090U65Z,RQ Toshiba

Description: DTMOS VI TOLL PD=230W F=1MHZ, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: TOLL, Vgs(th) (Max) @ Id: 4V @ 1.27mA, Power Dissipation (Max): 230W (Tc).

Weitere Produktangebote TK090U65Z,RQ nach Preis ab 4.05 EUR bis 10.01 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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TK090U65Z,RQ TK090U65Z,RQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=69970&prodName=TK090U65Z Description: DTMOS VI TOLL PD=230W F=1MHZ
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 2118 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.01 EUR
10+6.72 EUR
100+4.86 EUR
500+4.06 EUR
1000+4.05 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TK090U65Z,RQ TK090U65Z,RQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=69970&prodName=TK090U65Z Description: DTMOS VI TOLL PD=230W F=1MHZ
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Power Dissipation (Max): 230W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH