TK090Z65Z,S1F Toshiba Semiconductor and Storage

Description: MOSFET N-CH 650V 30A TO247-4L, Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247-4L(T), Part Status: Active, Packaging: Tube, Vgs(th) (Max) @ Id: 4V @ 1.27mA, Power Dissipation (Max): 230W (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-247-4.