TK095U65Z5,RQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 650 V, 0.095 @10V,
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4.5V @ 1.27mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
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Technische Details TK095U65Z5,RQ Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 650 V, 0.095 @10V,, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TOLL, Vgs(th) (Max) @ Id: 4.5V @ 1.27mA, Power Dissipation (Max): 230W (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote TK095U65Z5,RQ nach Preis ab 4.52 EUR bis 10.65 EUR
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TK095U65Z5,RQ | Toshiba |
MOSFETs N-ch MOSFET, 650 V, 0.095 ohma.10V, TOLL, DTMOS? |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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TK095U65Z5,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 650 V, 0.095 @10V, Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TOLL Vgs(th) (Max) @ Id: 4.5V @ 1.27mA Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerSFN |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK095U65Z5,RQ |
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Hersteller: Toshiba
MOSFETs N-ch MOSFET, 650 V, 0.095 ohma.10V, TOLL, DTMOS?
MOSFETs N-ch MOSFET, 650 V, 0.095 ohma.10V, TOLL, DTMOS?
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.6 EUR |
| 10+ | 7.16 EUR |
| 100+ | 5.33 EUR |
| 2000+ | 4.52 EUR |
| TK095U65Z5,RQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 650 V, 0.095 @10V,
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4.5V @ 1.27mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Description: N-CH MOSFET, 650 V, 0.095 @10V,
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4.5V @ 1.27mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.65 EUR |
| 10+ | 7.19 EUR |
| 100+ | 5.35 EUR |