TK095U65Z5,RQ Toshiba Semiconductor and Storage

Description: N-CH MOSFET, 650 V, 0.095 @10V,, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TOLL, Vgs(th) (Max) @ Id: 4.5V @ 1.27mA, Power Dissipation (Max): 230W (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).