TK099N60Z1,S1F Toshiba
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.48 EUR |
| 10+ | 5.47 EUR |
| 120+ | 3.66 EUR |
| 510+ | 3.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK099N60Z1,S1F Toshiba
Description: N-CH MOSFET, 600 V, 0.099 @10V,, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V, Power Dissipation (Max): 176W (Tc), Vgs(th) (Max) @ Id: 4V @ 930µA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V.
Weitere Produktangebote TK099N60Z1,S1F nach Preis ab 4.41 EUR bis 7.85 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK099N60Z1,S1F | Hersteller : Toshiba Semiconductor and Storage |
 Description: N-CH MOSFET, 600 V, 0.099 @10V,Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4V @ 930µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
|