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Technische Details TK100E06N1 Toshiba
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 255W; TO220AB, Type of transistor: N-MOSFET, Drain-source voltage: 60V, Drain current: 100A, Power dissipation: 255W, Case: TO220AB, Gate-source voltage: ±20V, Mounting: THT, Gate charge: 0.14µC, Kind of channel: enhancement, Polarisation: unipolar, Kind of package: tube, On-state resistance: 2.3mΩ.
Weitere Produktangebote TK100E06N1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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TK100E06N1,S1X(S | TOSHIBA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 100A; 255W; TO220AB Type of transistor: N-MOSFET Drain-source voltage: 60V Drain current: 100A Power dissipation: 255W Case: TO220AB Gate-source voltage: ±20V Mounting: THT Gate charge: 0.14µC Kind of channel: enhancement Polarisation: unipolar Kind of package: tube On-state resistance: 2.3mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TK100E06N1,S1X(S |
|
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 255W; TO220AB
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 255W
Case: TO220AB
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: tube
On-state resistance: 2.3mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 255W; TO220AB
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 255W
Case: TO220AB
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: tube
On-state resistance: 2.3mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH