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Technische Details TK10A60W Toshiba
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67, Mounting: THT, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 20nC, On-state resistance: 327mΩ, Drain current: 9.7A, Gate-source voltage: ±30V, Power dissipation: 30W, Drain-source voltage: 600V, Kind of package: tube, Case: SC67, Kind of channel: enhancement.
Weitere Produktangebote TK10A60W
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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TK10A60W,S4VX(M | TOSHIBA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67 Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 20nC On-state resistance: 327mΩ Drain current: 9.7A Gate-source voltage: ±30V Power dissipation: 30W Drain-source voltage: 600V Kind of package: tube Case: SC67 Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 850 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TK10A60W,S4VX(M |
|
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 327mΩ
Drain current: 9.7A
Gate-source voltage: ±30V
Power dissipation: 30W
Drain-source voltage: 600V
Kind of package: tube
Case: SC67
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 327mΩ
Drain current: 9.7A
Gate-source voltage: ±30V
Power dissipation: 30W
Drain-source voltage: 600V
Kind of package: tube
Case: SC67
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 850 Stücke
Im Einkaufswagen
Stück im Wert von UAH