auf Bestellung 179 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.21 EUR |
| 50+ | 2.71 EUR |
| 100+ | 2.36 EUR |
| 250+ | 2.29 EUR |
| 500+ | 1.85 EUR |
| 1000+ | 1.69 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK10A80E,S4X Toshiba
Description: MOSFET N-CH 800V 10A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V.
Weitere Produktangebote TK10A80E,S4X
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
TK10A80E,S4X Produktcode: 203788
zu Favoriten hinzufügen
Lieblingsprodukt
|
 Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
|||
 |
TK10A80E,S4X | Hersteller : Toshiba |
Trans MOSFET N-CH Si 800V 10A 3-Pin(3+Tab) TO-220SIS Tube |
Produkt ist nicht verfügbar |
|
|
|
TK10A80E,S4X | Hersteller : Toshiba |
Trans MOSFET N-CH Si 800V 10A 3-Pin(3+Tab) TO-220SIS Tube |
Produkt ist nicht verfügbar |
|
 |
TK10A80E,S4X | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 800V 10A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
Produkt ist nicht verfügbar |