| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.67 EUR |
| 10+ | 8.88 EUR |
| 25+ | 7.52 EUR |
| 100+ | 7.2 EUR |
| 250+ | 6.95 EUR |
| 500+ | 6.68 EUR |
| 1000+ | 6.06 EUR |
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Technische Details TK110Z65Z,S1F Toshiba
Description: POWER MOSFET TRANSISTOR TO-247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.02mA, Supplier Device Package: TO-247-4L(T), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V.
Weitere Produktangebote TK110Z65Z,S1F nach Preis ab 6.89 EUR bis 11.58 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK110Z65Z,S1F | Toshiba Semiconductor and Storage |
Description: POWER MOSFET TRANSISTOR TO-247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.02mA Supplier Device Package: TO-247-4L(T) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V |
auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK110Z65Z,S1F | Toshiba | Trans MOSFET N-CH Si 650V 24A 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
|
| TK110Z65Z,S1F |
Hersteller: Toshiba Semiconductor and Storage
Description: POWER MOSFET TRANSISTOR TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TO-247-4L(T)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Description: POWER MOSFET TRANSISTOR TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TO-247-4L(T)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.58 EUR |
| 25+ | 9.19 EUR |
| TK110Z65Z,S1F |
Hersteller: Toshiba
Trans MOSFET N-CH Si 650V 24A 4-Pin(4+Tab) TO-247 Tube
Trans MOSFET N-CH Si 650V 24A 4-Pin(4+Tab) TO-247 Tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 9.67 EUR |
| 22+ | 7.84 EUR |
| 25+ | 7.22 EUR |
| 50+ | 6.89 EUR |