Produktrezensionen
Produktbewertung abgeben
Technische Details TK11P65W Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 11.1A; 100W; DPAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 11.1A, Power dissipation: 100W, Case: DPAK, Gate-source voltage: ±30V, On-state resistance: 440mΩ, Mounting: SMD, Gate charge: 25nC, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote TK11P65W
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
TK11P65W,RQ(S | TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 11.1A; 100W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11.1A Power dissipation: 100W Case: DPAK Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TK11P65W,RQ(S |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.1A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.1A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.1A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.1A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH