TK125A60Z1,S4X Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: N-CH MOSFET, 600 V, 0.125 @10V,
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.54 EUR |
| 50+ | 2.81 EUR |
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Technische Details TK125A60Z1,S4X Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.125 @10V,, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 730µA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V.
Weitere Produktangebote TK125A60Z1,S4X nach Preis ab 2.01 EUR bis 5.61 EUR
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TK125A60Z1,S4X | Hersteller : Toshiba |
MOSFETs N-ch MOSFET, 600 V, 0.125 ohma.10V, TO-220SIS, DTMOS? |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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