Weitere Produktangebote TK12A50D(STA4,Q,M) nach Preis ab 2.05 EUR bis 6.14 EUR
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TK12A50D(STA4,Q,M) | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 500V 12A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
auf Bestellung 86 Stücke: Lieferzeit 10-14 Tag (e) |
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TK12A50D(STA4,Q,M) | Toshiba |
MOSFETs N-Ch MOS 12A 500V 45W 1350pF 0.52 |
auf Bestellung 196 Stücke: Lieferzeit 10-14 Tag (e) |
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TK12A50D(STA4,Q,M) | Toshiba |
Trans MOSFET N-CH Si 500V 12A 3-Pin(3+Tab) TO-220SIS |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| TK12A50D |
auf Bestellung 2478 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TK12A50D(STA4,Q,M) |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Description: MOSFET N-CH 500V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 86 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.57 EUR |
| 50+ | 2.78 EUR |
| TK12A50D(STA4,Q,M) |
|
Hersteller: Toshiba
MOSFETs N-Ch MOS 12A 500V 45W 1350pF 0.52
MOSFETs N-Ch MOS 12A 500V 45W 1350pF 0.52
auf Bestellung 196 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.14 EUR |
| 10+ | 3.08 EUR |
| 100+ | 2.83 EUR |
| 500+ | 2.24 EUR |
| 1000+ | 2.05 EUR |
| TK12A50D(STA4,Q,M) |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 500V 12A 3-Pin(3+Tab) TO-220SIS
Trans MOSFET N-CH Si 500V 12A 3-Pin(3+Tab) TO-220SIS
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)