Weitere Produktangebote TK12A60W,S4VX nach Preis ab 3.67 EUR bis 8.54 EUR
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TK12A60W,S4VX | Toshiba |
 MOSFETs N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC |
auf Bestellung 84 Stücke: Lieferzeit 10-14 Tag (e) |
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TK12A60W,S4VX | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 11.5A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 600µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK12A60W,S4VX |
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Hersteller: Toshiba
MOSFETs N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC
MOSFETs N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC
auf Bestellung 84 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.79 EUR |
| 10+ | 4.25 EUR |
| 100+ | 3.8 EUR |
| 500+ | 3.67 EUR |
| TK12A60W,S4VX |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Description: MOSFET N-CH 600V 11.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.54 EUR |
| 50+ | 4.43 EUR |