TK12A60W,S4VX Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Description: MOSFET N-CH 600V 11.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.23 EUR |
50+ | 4.93 EUR |
Produktrezensionen
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Technische Details TK12A60W,S4VX Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 600µA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V.
Weitere Produktangebote TK12A60W,S4VX nach Preis ab 4.65 EUR bis 8.53 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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TK12A60W,S4VX | Hersteller : Toshiba | MOSFET N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC |
auf Bestellung 58 Stücke: Lieferzeit 14-28 Tag (e) |
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TK12A60W,S4VX | Hersteller : Toshiba | Trans MOSFET N-CH Si 600V 11.5A 3-Pin(3+Tab) TO-220SIS Magazine |
auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) |
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TK12A60W,S4VX | Hersteller : Toshiba | Trans MOSFET N-CH Si 600V 11.5A 3-Pin(3+Tab) TO-220SIS Magazine |
auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) |
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TK12A60W,S4VX Produktcode: 173725 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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TK12A60W,S4VX | Hersteller : Toshiba | Trans MOSFET N-CH Si 600V 11.5A 3-Pin(3+Tab) TO-220SIS Magazine |
Produkt ist nicht verfügbar |
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TK12A60W,S4VX | Hersteller : Toshiba | Trans MOSFET N-CH Si 600V 11.5A 3-Pin(3+Tab) TO-220SIS Magazine |
Produkt ist nicht verfügbar |