TK12J60U(F) Toshiba Semiconductor and Storage

Description: MOSFET N-CH 600V 12A TO3P, Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-3P(N), Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 144W (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tray.