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TK14A55D(STA4,Q,M)

TK14A55D(STA4,Q,M) Toshiba Semiconductor and Storage

TK14A55D_datasheet_en_20131101.pdf?did=22030&prodName=TK14A55D Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 14A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.56 EUR
10+ 4.99 EUR
Mindestbestellmenge: 4
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Technische Details TK14A55D(STA4,Q,M) Toshiba Semiconductor and Storage

Description: MOSFET N-CH 550V 14A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 370mOhm @ 7A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 550 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V.

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TK14A55D(STA4,Q,M) TK14A55D(STA4,Q,M) Hersteller : Toshiba TK14A55D_datasheet_en_20131101-1150633.pdf MOSFET N-Ch MOS 14A 550V 50W 2300pF 0.37
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