| Anzahl | Preis |
|---|---|
| 2+ | 2.39 EUR |
| 10+ | 1.83 EUR |
| 100+ | 1.27 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 1.07 EUR |
| 2000+ | 0.94 EUR |
| 4000+ | 0.93 EUR |
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Technische Details TK15S04N1L,LQ Toshiba
Description: MOSFET N-CH 40V 15A DPAK, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DPAK+, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Power Dissipation (Max): 46W (Tc), Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote TK15S04N1L,LQ nach Preis ab 1.1 EUR bis 3.31 EUR
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TK15S04N1L,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 15A DPAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 1381 Stücke: Lieferzeit 10-14 Tag (e) |
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TK15S04N1L,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 15A DPAKQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
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