Produkte > TOSHIBA > TK15S04N1L,LXHQ
TK15S04N1L,LXHQ

TK15S04N1L,LXHQ Toshiba


0285F1B20A2A6E5C043DFF1DD56BE878A5BD6AB206BA4715BDB658ED14904609.pdf
Hersteller: Toshiba
MOSFETs PD=46W F=1MHZ AEC-Q101
auf Bestellung 2900 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.39 EUR
10+1.07 EUR
100+0.74 EUR
500+0.62 EUR
1000+0.57 EUR
2000+0.54 EUR
4000+0.48 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details TK15S04N1L,LXHQ Toshiba

Description: MOSFET N-CH 40V 15A DPAK, Qualification: AEC-Q101, Grade: Automotive, Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DPAK+, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Power Dissipation (Max): 46W (Tc), Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).

Weitere Produktangebote TK15S04N1L,LXHQ nach Preis ab 0.61 EUR bis 2.06 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TK15S04N1L,LXHQ TK15S04N1L,LXHQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=14571&prodName=TK15S04N1L Description: MOSFET N-CH 40V 15A DPAK
Qualification: AEC-Q101
Grade: Automotive
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
auf Bestellung 1917 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
14+1.3 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
TK15S04N1L,LXHQ TK15S04N1L,LXHQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=14571&prodName=TK15S04N1L Description: MOSFET N-CH 40V 15A DPAK
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH