| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.62 EUR |
| 10+ | 1.23 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.84 EUR |
| 2000+ | 0.74 EUR |
| 4000+ | 0.64 EUR |
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Technische Details TK15S04N1L,LXHQ Toshiba
Description: MOSFET N-CH 40V 15A DPAK, Qualification: AEC-Q101, Grade: Automotive, Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DPAK+, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Power Dissipation (Max): 46W (Tc), Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote TK15S04N1L,LXHQ nach Preis ab 0.87 EUR bis 2.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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TK15S04N1L,LXHQ | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 40V 15A DPAKQualification: AEC-Q101 Grade: Automotive FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) |
auf Bestellung 1780 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK15S04N1L,LXHQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 15A DPAK
Qualification: AEC-Q101
Grade: Automotive
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Description: MOSFET N-CH 40V 15A DPAK
Qualification: AEC-Q101
Grade: Automotive
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
auf Bestellung 1780 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.67 EUR |
| 13+ | 1.67 EUR |
| 50+ | 1.25 EUR |
| 100+ | 1.11 EUR |
| 500+ | 0.87 EUR |