Weitere Produktangebote TK160F10N1L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
TK160F10N1L,LQ(O | TOSHIBA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 160A; 375W; TO220SM Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 160A Case: TO220SM Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 121nC Kind of channel: enhancement Power dissipation: 375W Kind of package: reel; tape |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TK160F10N1L,LQ(O |
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Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 375W; TO220SM
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Case: TO220SM
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 121nC
Kind of channel: enhancement
Power dissipation: 375W
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 375W; TO220SM
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Case: TO220SM
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 121nC
Kind of channel: enhancement
Power dissipation: 375W
Kind of package: reel; tape
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)


