
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 5.84 EUR |
10+ | 5.16 EUR |
25+ | 5.14 EUR |
50+ | 3.03 EUR |
100+ | 2.76 EUR |
250+ | 2.75 EUR |
500+ | 2.41 EUR |
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Technische Details TK17A65W,S5X Toshiba
Description: X35 PB-F POWER MOSFET TRANSISTOR, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 900µA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V.
Weitere Produktangebote TK17A65W,S5X nach Preis ab 5.93 EUR bis 5.93 EUR
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TK17A65W,S5X | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 900µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V |
auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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TK17A65W,S5X | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |
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TK17A65W,S5X | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |