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TK190U60Z1,RQ

TK190U60Z1,RQ Toshiba Semiconductor and Storage

TK190U60Z1_datasheet_en_20250730.pdf?did=162287&prodName=TK190U60Z1 Hersteller: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 600 V 0.190 OHM TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 480µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+3.63 EUR
4000+3.56 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TK190U60Z1,RQ Toshiba Semiconductor and Storage

Description: N-CH MOSFET 600 V 0.190 OHM TOLL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V, Power Dissipation (Max): 113W (Tc), Vgs(th) (Max) @ Id: 4V @ 480µA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V.

Weitere Produktangebote TK190U60Z1,RQ nach Preis ab 3.72 EUR bis 6.56 EUR

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TK190U60Z1,RQ TK190U60Z1,RQ Hersteller : Toshiba Semiconductor and Storage TK190U60Z1_datasheet_en_20250730.pdf?did=162287&prodName=TK190U60Z1 Description: N-CH MOSFET 600 V 0.190 OHM TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 4V @ 480µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 300 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.56 EUR
10+4.99 EUR
25+4.59 EUR
100+4.15 EUR
250+3.95 EUR
500+3.82 EUR
1000+3.72 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH