auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.74 EUR |
| 10+ | 10.61 EUR |
| 30+ | 6.28 EUR |
| 60+ | 6.25 EUR |
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Technische Details TK20N60W,S1VF Toshiba
Description: MOSFET N-CH 600V 20A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V, Power Dissipation (Max): 165W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 1mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V.
Weitere Produktangebote TK20N60W,S1VF nach Preis ab 7.60 EUR bis 12.06 EUR
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TK20N60W,S1VF | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 600V 20A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V |
auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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TK20N60W,S1VF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |