Technische Details TK20P04M1,RQ(S Toshiba
Description: MOSFET N-CH 40V 20A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V, Power Dissipation (Max): 27W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 100µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 10 V.
Weitere Produktangebote TK20P04M1,RQ(S
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TK20P04M1,RQ(S | Hersteller : TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 20A; 27W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Power dissipation: 27W Case: DPAK Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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TK20P04M1,RQ(S | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 20A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 100µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 10 V |
Produkt ist nicht verfügbar |
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TK20P04M1,RQ(S | Hersteller : Toshiba |
MOSFET N-Ch MOS 20A 40V 27W 985pF 0.034 |
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TK20P04M1,RQ(S | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 27W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Power dissipation: 27W Case: DPAK Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |