TK20V60W,LVQ

TK20V60W,LVQ Toshiba Semiconductor and Storage


TK20V60W_datasheet_en_20140228.pdf?did=14218&prodName=TK20V60W
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A 4DFN
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN-EP (8x8)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Tape & Reel (TR)
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Technische Details TK20V60W,LVQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 600V 20A 4DFN, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 4-DFN-EP (8x8), Vgs(th) (Max) @ Id: 3.7V @ 1mA, Power Dissipation (Max): 156W (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-VSFN Exposed Pad, Packaging: Tape & Reel (TR).

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TK20V60W,LVQ TK20V60W,LVQ Hersteller : Toshiba Semiconductor and Storage TK20V60W_datasheet_en_20140228.pdf?did=14218&prodName=TK20V60W Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
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TK20V60W,LVQ TK20V60W,LVQ Hersteller : Toshiba TK20V60W_datasheet_en_20140228-1916143.pdf MOSFETs N-Ch DTMOSIV 600 V 156W 1680pF 20A
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Im Einkaufswagen  Stück im Wert von  UAH