TK22A65X5,S5X Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 3+ | 7.37 EUR |
| 50+ | 3.84 EUR |
| 100+ | 3.49 EUR |
| 500+ | 2.89 EUR |
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Technische Details TK22A65X5,S5X Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 4.5V @ 1.1mA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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TK22A65X5,S5X | Hersteller : Toshiba |
MOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS |
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