| Anzahl | Preis |
|---|---|
| 1+ | 3.17 EUR |
| 10+ | 1.68 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 1.05 EUR |
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Technische Details TK22E10N1,S1X Toshiba
Description: MOSFET N CH 100V 52A TO220, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 300µA, Power Dissipation (Max): 72W (Tc), Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Current - Continuous Drain (Id) @ 25°C: 52A (Tc).
Weitere Produktangebote TK22E10N1,S1X nach Preis ab 3.22 EUR bis 3.22 EUR
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TK22E10N1,S1X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N CH 100V 52A TO220Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 300µA Power Dissipation (Max): 72W (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Current - Continuous Drain (Id) @ 25°C: 52A (Tc) |
auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
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