TK25A20D,S5X Toshiba Semiconductor and Storage

Description: PB-F POWER MOSFET TRANSISTOR TO-, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 12.5A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 100 V.