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TK25S06N1L,LXHQ

TK25S06N1L,LXHQ Toshiba Semiconductor and Storage

docget.jsp?did=29750&prodName=TK25S06N1L Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 36.8mOhm @ 12.5A, 4.5V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.58 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TK25S06N1L,LXHQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 25A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Rds On (Max) @ Id, Vgs: 36.8mOhm @ 12.5A, 4.5V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: DPAK+, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote TK25S06N1L,LXHQ nach Preis ab 0.58 EUR bis 2.16 EUR

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TK25S06N1L,LXHQ TK25S06N1L,LXHQ Hersteller : Toshiba TK25S06N1L_datasheet_en_20200624-1649663.pdf MOSFET 57W 1MHz Automotive; AEC-Q101
auf Bestellung 79096 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.46 EUR
10+1.2 EUR
100+0.93 EUR
500+0.79 EUR
1000+0.64 EUR
2000+0.61 EUR
4000+0.58 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TK25S06N1L,LXHQ TK25S06N1L,LXHQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=29750&prodName=TK25S06N1L Description: MOSFET N-CH 60V 25A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 36.8mOhm @ 12.5A, 4.5V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2381 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
13+1.37 EUR
100+0.91 EUR
500+0.71 EUR
1000+0.65 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH