TK28E65W,S1X Toshiba Semiconductor and Storage

Description: PB-F POWER MOSFET TRANSISTOR TO-, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 3.5V @ 1.6mA, Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Power Dissipation (Max): 230W (Tc).