TK290P60Y,RQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 1.44 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2000 Stücke
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Produktbewertung abgeben
Technische Details TK290P60Y,RQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4V @ 450µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V.
Weitere Produktangebote TK290P60Y,RQ nach Preis ab 1.46 EUR bis 4.94 EUR
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TK290P60Y,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 11.5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 450µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V |
auf Bestellung 2194 Stücke: Lieferzeit 10-14 Tag (e) |
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TK290P60Y,RQ | Toshiba |
MOSFETs N-Ch DTMOSV 650V 100W 730pF 11.5A |
auf Bestellung 586 Stücke: Lieferzeit 10-14 Tag (e) |
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TK290P60Y,RQ | Toshiba |
Trans MOSFET N-CH Si 600V 11.5A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TK290P60Y,RQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V
Description: MOSFET N-CH 600V 11.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V
auf Bestellung 2194 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.77 EUR |
| 10+ | 3.07 EUR |
| 50+ | 2.33 EUR |
| 100+ | 2.09 EUR |
| 500+ | 1.68 EUR |
| TK290P60Y,RQ |
|
Hersteller: Toshiba
MOSFETs N-Ch DTMOSV 650V 100W 730pF 11.5A
MOSFETs N-Ch DTMOSV 650V 100W 730pF 11.5A
auf Bestellung 586 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.94 EUR |
| 10+ | 3.17 EUR |
| 100+ | 2.15 EUR |
| 500+ | 1.82 EUR |
| 1000+ | 1.62 EUR |
| 2000+ | 1.54 EUR |
| 4000+ | 1.46 EUR |
| TK290P60Y,RQ |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 600V 11.5A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 600V 11.5A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)