TK290P60Y,RQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 450µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2000+ | 1.2 EUR |
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Technische Details TK290P60Y,RQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 450µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote TK290P60Y,RQ nach Preis ab 1.26 EUR bis 2.66 EUR
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TK290P60Y,RQ | Hersteller : Toshiba |
MOSFETs N-Ch DTMOSV 650V 100W 730pF 11.5A |
auf Bestellung 1012 Stücke: Lieferzeit 10-14 Tag (e) |
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TK290P60Y,RQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 11.5A DPAK Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 450µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 3980 Stücke: Lieferzeit 10-14 Tag (e) |
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