| Anzahl | Preis |
|---|---|
| 1+ | 12.53 EUR |
| 10+ | 6.72 EUR |
| 100+ | 6.3 EUR |
| 500+ | 5.88 EUR |
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Technische Details TK31A60W,S4VX Toshiba
Description: MOSFET N-CH 600V 30.8A TO220SIS, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 3.7V @ 1.5mA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta).
Weitere Produktangebote TK31A60W,S4VX nach Preis ab 6.88 EUR bis 12.58 EUR
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TK31A60W,S4VX | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 600V 30.8A TO220SISFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) |
auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
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