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TK31A60W Toshiba



Hersteller: Toshiba

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Technische Details TK31A60W Toshiba

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; Idm: 123A; 45W; TO220FP, Mounting: THT, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 86nC, On-state resistance: 88mΩ, Drain current: 30.8A, Gate-source voltage: ±30V, Power dissipation: 45W, Pulsed drain current: 123A, Drain-source voltage: 600V, Kind of package: tube, Case: TO220FP, Kind of channel: enhancement.

Weitere Produktangebote TK31A60W

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
TK10A60W,S4VX(M TK10A60W,S4VX(M TOSHIBA Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; Idm: 123A; 45W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 88mΩ
Drain current: 30.8A
Gate-source voltage: ±30V
Power dissipation: 45W
Pulsed drain current: 123A
Drain-source voltage: 600V
Kind of package: tube
Case: TO220FP
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK10A60W,S4VX(M
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30.8A; Idm: 123A; 45W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 88mΩ
Drain current: 30.8A
Gate-source voltage: ±30V
Power dissipation: 45W
Pulsed drain current: 123A
Drain-source voltage: 600V
Kind of package: tube
Case: TO220FP
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH