TK31N60X,S1F
Produktcode: 169333
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Weitere Produktangebote TK31N60X,S1F nach Preis ab 6.26 EUR bis 13.74 EUR
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TK31N60X,S1F | Toshiba |
MOSFETs DTMOSIV-H/S 600V 88mOhmmax(VGS=10V) |
auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) |
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TK31N60X,S1F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 30.8A TO247 Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 3.5V @ 1.5mA Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
auf Bestellung 23 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK31N60X,S1F |
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Hersteller: Toshiba
MOSFETs DTMOSIV-H/S 600V 88mOhmmax(VGS=10V)
MOSFETs DTMOSIV-H/S 600V 88mOhmmax(VGS=10V)
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.7 EUR |
| 10+ | 7.5 EUR |
| 120+ | 6.66 EUR |
| 510+ | 6.26 EUR |
| TK31N60X,S1F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Description: MOSFET N-CH 600V 30.8A TO247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.74 EUR |