Weitere Produktangebote TK32E12N1,S1X nach Preis ab 1.23 EUR bis 4.25 EUR
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TK32E12N1,S1X | Toshiba |
 MOSFETs N-Ch 60A 98W FET 120V 2000pF 34nC |
auf Bestellung 133 Stücke: Lieferzeit 10-14 Tag (e) |
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TK32E12N1,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 120V 60A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V Power Dissipation (Max): 98W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK32E12N1,S1X |
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Hersteller: Toshiba
MOSFETs N-Ch 60A 98W FET 120V 2000pF 34nC
MOSFETs N-Ch 60A 98W FET 120V 2000pF 34nC
auf Bestellung 133 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.62 EUR |
| 10+ | 1.74 EUR |
| 500+ | 1.23 EUR |
| TK32E12N1,S1X |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 120V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
Description: MOSFET N CH 120V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.25 EUR |
| 50+ | 2.13 EUR |