| Anzahl | Preis |
|---|---|
| 1+ | 2.96 EUR |
| 10+ | 2.38 EUR |
| 25+ | 2.29 EUR |
| 100+ | 1.71 EUR |
| 500+ | 1.39 EUR |
| 1000+ | 1.33 EUR |
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Technische Details TK33S10N1L,LQ Toshiba
Description: MOSFET N-CH 100V 33A DPAK, Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 33A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DPAK+, Vgs(th) (Max) @ Id: 2.5V @ 500µA, Power Dissipation (Max): 125W (Tc).
Weitere Produktangebote TK33S10N1L,LQ nach Preis ab 2.76 EUR bis 4.28 EUR
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TK33S10N1L,LQ | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 100V 33A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V |
auf Bestellung 97 Stücke: Lieferzeit 10-14 Tag (e) |
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TK33S10N1L,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 33A DPAK Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 2.5V @ 500µA Power Dissipation (Max): 125W (Tc) |
Produkt ist nicht verfügbar |