TK380A60Y,S4X Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
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Technische Details TK380A60Y,S4X Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V, Power Dissipation (Max): 30W, Vgs(th) (Max) @ Id: 4V @ 360µA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V.
Weitere Produktangebote TK380A60Y,S4X
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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TK380A60Y,S4X | Toshiba |
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Tube |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| TK380A60Y,S4X |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Tube
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Tube
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)