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Technische Details TK39N60X Toshiba
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 38.8A; 270W; TO247-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 38.8A, Power dissipation: 270W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 55mΩ, Mounting: THT, Gate charge: 85nC, Kind of package: tube, Kind of channel: enhancement.
Weitere Produktangebote TK39N60X
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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TK39N60X,S1F(S | TOSHIBA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 38.8A; 270W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 38.8A Power dissipation: 270W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 55mΩ Mounting: THT Gate charge: 85nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TK39N60X,S1F(S |
|
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38.8A; 270W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38.8A
Power dissipation: 270W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 38.8A; 270W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38.8A
Power dissipation: 270W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH