auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 58+ | 2.7 EUR |
| 63+ | 2.41 EUR |
| 100+ | 1.99 EUR |
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Technische Details TK3R3E08QM,S1X Toshiba
Description: UMOS10 TO-220AB 80V 3.3MOHM, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.3mA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V.
Weitere Produktangebote TK3R3E08QM,S1X nach Preis ab 1.99 EUR bis 5.72 EUR
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TK3R3E08QM,S1X | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 80V 200A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 185 Stücke: Lieferzeit 14-21 Tag (e) |
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TK3R3E08QM,S1X | Hersteller : Toshiba |
MOSFET UMOS10 TO-220AB 80V 3.3mohm |
auf Bestellung 1285 Stücke: Lieferzeit 14-28 Tag (e) |
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TK3R3E08QM,S1X | Hersteller : Toshiba Semiconductor and Storage |
Description: UMOS10 TO-220AB 80V 3.3MOHM Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.3mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V |
auf Bestellung 120 Stücke: Lieferzeit 21-28 Tag (e) |
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