auf Bestellung 757 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.88 EUR |
| 10+ | 1.51 EUR |
| 100+ | 1.20 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.78 EUR |
| 5000+ | 0.76 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK40A06N1,S4X Toshiba
Description: MOSFET N-CH 60V 40A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 10.4mOhm @ 20A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 300µA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 30 V.
Weitere Produktangebote TK40A06N1,S4X nach Preis ab 1.23 EUR bis 1.94 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK40A06N1,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 60V 40A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 20A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 300µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 30 V |
auf Bestellung 456 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
TK40A06N1,S4X | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 43A 3-Pin(3+Tab) TO-220SIS Magazine |
Produkt ist nicht verfügbar |