TK40P03M1(T6RDS-Q) Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 40A DPAK, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 2.3V @ 100µA, Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount.